Technology and Characterization of Microwave Power GaAs MESFET for Space Communication

Authors: Sh. S. KHALILOV, V. E. SIZOV, A. S. VEDENEEV, A. G. ZHDAN

Abstract: A nondestructive diagnostic tool for microwave power GaAs NESFET for the space communication systems is presented. The parasitic effects and intrinsic characteristics of MESFETs at temperature range 77-300 K are investigated, and the main parameters of MESFET are determinated.

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