Effects of Substrate Temperature on Properties of a-SiN_x:H Films

Authors: TAYYAR GÜNGÖR, HÜSEYİN TOLUNAY

Abstract: Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substrate temperature on the electrical and optical properties of the films have been studied.

Keywords: A. Hydrogenated amorphous silicon nitride; B. Substrate temperature; C. Dark conductivity; D. Photoconductivity; E. Optical gap.

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