On Radiation Processes in Silicon Doped with Rhodium and Sulphur

Authors: M. KARIMOV

Abstract: The effect of Rh and S atom concentration influence on carriers removal rate in n-Si and Si under fast neutrons irradiation has been investigated. It was shown that the initial rate of carrier concentration removal decreases with increasing Rh concentration in n-Si with increasing S atom's concentration. This anomaly is connected with the degree of conductivity homogeneity and the change in degree of compensation in n-Si and n-Si.

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