Peculiarity of Hole Mobility in Silicon Compensated with Sulphur

Authors: M. KARIMOV

Abstract: It has been observed that \mu increases in n-Si as the free carrier concentration in the conduction band (at \sim 300K)- together with the temperature in the 77-100 K region increases. Such anomalous behavior of \mu is explained by the presence of a microinhomogeneities of high- resistance inclusion (n-regions) in the low resistance bulk (n^{+}- regions), which form during the doping process of the silicon with sulphur ( S), and is independent of cooling rate in the interval 4-300 ^{\circ}C. min^{-1}.

Keywords: