The Effect of Halogen Impurities on Electrocunductivity of Chalcogenide Glass Semicunductor Se-As System

Authors: A.I. ISAOGLI, S.M. IBRAHIMGIZI, A.R. KAMILOGLI

Abstract: DC conductivity has been measured as function of dopant concentration for Se-As glass containing 2-10 \% As, doped with Cl or Br. It was established that concentration dependences of the conductivity have maxima for concentration of Cl or Br between $10^{-3}$ and $10^{-2}$ at \%. The effect of halogen impurities on electroconductivity of Se-As glasses has been attributed to the change of relative concentrations of the charged defect centers $(C^-_1, C^+_3)$ and to the occurrence of new $Cl^-, Br^-$ centers associated with chlorine (bromine) atoms and the compensation of the effect of arsenic on the energy spectrum of electron states.

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