Dependence of Absorption Edge on Thickness in Ga_{2}Se_{3} Films

Authors: A. B. MEDJIDOV, R. A. ALI-ZADE, M. A. JAFAROV, A. M. PASHAYEV

Abstract: Ga_{2}Se_{3) thin films having thickness comparable with the de Broglie wavelength of charge carriers have been prepared. Energy gap dependence of the amorphous films upon their thickness at the temperature of 195 K has been studied. A qualitative agreement with theoretical conclusions, implying that the observed increase in energy gap for amorphous G_{2}Se_{ 3} films is brought about by quantum size phenomena, has been established.

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