Acceptor States for Short-Range Potential in InSb and HgTe

Authors: F. M. GASHIMZADE, A. M. BABAEV

Abstract: Found is the energy dependence of the acceptors states on films thickness and location of the impurities within the film. It is shown that, as the location of the impurity approaches. The edge of the film, the magnitude of splitting of the degenerated acceptors state increases.

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