On the Theory of Current-Voltage Characteristic of Semiconductor Diode Structures with Strong Carrier Accumulation on Conditions of Saturation of the Recombination Rate

Authors: A. Yu. LEIDERMAN, M. K. MINBAEVA

Abstract: The theoretical treatment of forward-biased p-n-n^{+} structure with strong accumulation and field-opposed diffusion on conditions of saturation of recombination rate is obtained. It is shown that, as predicted in [1], on conditions of Shockley-Read recombination, the effect of \lq\lq injection exlusion" resulting in V(J) dependence of the type V^{\sim} exp(aJW) takes place at these conditions as well.

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