The Determination of Thermal Annealing Effect on a-Si:H Films Coated on Glass and on Single Crystalline of Silicon

Authors: NECMİ SERİN, TÜLAY SERİN, ALİ RIZA ÖZDEMİR, BORA ALKAN, ÇELİK TARIMCI, BASRİ ÜNAL

Abstract: The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass and single cyrstalline silicon substrates by means of d.c. magnetron sputtering technique. a-Si:H/glass and a-Si:H/c-Si samples were annealed in the temperature range of 23-250^oC, 23-200^oC and 600-1050^oC, respectively. The effect of annealing on the a-Si:H films were examined by means of Infrared vibrational transmittance spectrum technique (IR) in the wavenumber range 4000-400 cm^{-1} and Scanning Electron Microsope (SEM). The results were interpreted in terms of hydrogen diffusion.

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