Electrophysical properties of Pb _1-xMn_x Se epitaxial films irradiated by γ-quanta

Authors: RAHIM MADATOV, RAKSHANA MAMISHOVA, MUSLIM MAMEDOV, JAVANSHIR ISMAYILOV, ULVIYA FARADJOVA

Abstract: Herein, the effect of γ-quanta on electrophysical and photoelectric properties of p-type Pb_1-xMn_x Se epitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has been investigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175 eV are generated, when p-type Pb_1-xMn_x Se (x = 0.01) epitaxial films are irradiated by γ-quanta at D >10 kGy doses. The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, but the decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with 0.175 eV energy as a recombination center.

Keywords: Epitaxial film, electroconductivity, photoconductivity, volt-amperage characteristics (VAC), γ-quanta

Full Text: PDF