Authors: Bahattin DÜZGÜN, İbrahim KARAMAN, Nazım UÇAR
Abstract: Crystals $\beta$-Sn are grown from ingots of 99.99\% purity by modified Bridgman method under $10^{-3}$ torr pressure and oriented by Laue back reflection method. The relation between crystal crosscut and dislocation density calculated using etch hillock technique is investigated. It is found that the dislocation density increases with increasing crystal crosscut.
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