Photocurrent and surface recombination mechanisms in the In_xGa_{1-x}N\slashGaN different-sized quantum dot solar cells

Authors: HOSSEIN MOVLA, FOOZIEH SOHRABI, JAFAR FATHI, HASSAN BABAEI, ARASH NIKNIAZI, KHADIJE KHALILI, NIMA ES'HAGHI GORJI

Abstract: We present a p-i-n structured solar cell with stacked layers of In_xGa_{1-x}N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in In_xGa_{1-x}N QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a ``rainbow'' solar cell can be designed.

Keywords: p-i-n Solar Cells, In_xGa_{1-x}N Quantum dots, photocurrent, surface recombination rate

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