Authors: Ruhi KAPLAN
Abstract: In-phase and quadrature frequency-resolved photocurrent (FRPC) of amorphous (a-) Si:H p-i-n junction solar cell was measured as a function of temperature, excitation light intensity, excitation wavelength, and applied electric field. The exponent \nu in the power law relationship I_{ph} \propto G^{\nu} between the photocurrent and the generation flux was determined over the temperature range of 20K and 300K. The results were compared with the predictions of photoconductivity models developed for amorphous semiconductors at high and low temperatures.
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