Acceptor Levels of Substitutional Zn, Cd and Hg Impurity Atoms in Ge_{1-x}Si_x Crystals

Authors: G. Kh. AZHDAROV, R.Z. KYAZIMZADE

Abstract: Hall measurement has been carried out for a set of Zn, Cd and Hg-doped Ge_{1-x}Si_x crystals (0 \leq X \leq 0,3). It is shown that the substitutional Zn_s and Cd_s atoms in Ge_{1-x}Si_x and Si behave as double acceptor as in Ge. In silicon the Hg_s atoms give rise to one deep acceptor center. The binding energies of the Zn_s, Cd_s and Hg_s acceptor states in Ge_{1-x}Si_x increase linearly with the silicon content. This result agrees qualitatively with the concept of a virtual crystal model. Random-alloy splitting of the Zn_s, Cd_s and Hg_s impurity levels in the crystals is iscussed.

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